Abstract
A novel power PiN diode model is derived based on the generalised all-injection level minority carrier drift–diffusion theory. An equivalent lossy transmission lines describing the carriers transport trough arbitrarily doped emitter and base quasi-neutral regions are defined. The extended electro-thermal diode model including temperature dependences of carrier transport parameters is also described and implemented in circuit simulator PSPICE. By tuning a small set of model parameters, an excellent agreement of modelling results with numerical simulations of realistic power PiN diode is obtained for different switching conditions and temperatures.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
