Abstract
An advanced physics-based equivalent-circuit model of IGBT has been described featuring a high accuracy in predicting device electrical performance in real circuit applications. A SPICE Level 3 model is employed for simulation of the equivalent DMOSFET, while the voltage dependant drain- to-gate overlapping capacitance and drain ohmic resistance elements are modelled separately. The one-dimensional physics- based model of the low-gain BJT device is developed using the equivalent non-linear lossy transmission line sub-circuit. IGBT model is implemented in PSPICE circuit simulator and high accuracy of the model is demonstrated by comparing the simulation results with the electrical measurements of several test power circuits.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
