Abstract
Fully amorphous pn-heterodiodes consisting of n-type zinc-tin oxide and p-type zinc-cobalt oxide are discussed. All fabrication steps are conducted at room-temperature except two baking steps within the photolithography for 90 s at 90 °C. Rectifications as high as six orders of magnitude are achieved and the ideality factors are between 1.2 and 2, depending on the diode design.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
