A review of novel methods to improve the optical and electrical properties of n-type and p-type sulphides and oxides: leading the frontiers of semiconductor technology

Abstract

This review paper focuses on the current advancements in improving the optical and electrical properties of n-type and p-type oxides and sulphide semiconductors. The demand for high-performance semiconductors has grown significantly in recent years due to their wide range of application in electronic and optoelectronic devices. However, the inherent limitations of these materials such as low conductivity, poor optical absorption, and low carrier mobility have hindered their widespread adoption. This paper provides an overview of various techniques that have been employed to improve the optical and electrical properties of n-type and p-type oxides and sulphide semiconductors. These techniques include doping with impurities, defect engineering, surface passivation, and bandgap engineering. The paper also discusses the recent progress in the synthesis of these materials using different methods such as chemical vapor deposition, sol–gel, and hydrothermal methods. Furthermore, this review paper highlights the applications of these improved materials in various fields such as solar cells, light-emitting diodes, photocatalysis, and sensing. Finally, the paper concludes with the prospects of these materials and the challenges that need to be addressed to achieve their full potential. Overall, this review paper provides valuable insights into the current state-of-the-art techniques for improving the optical and electrical properties of n-type and p-type oxides and sulphide semiconductors, which can potentially lead to the development of high-performance devices.