All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride

Abstract

AbstractThis report is on the electrical properties of all‐amorphous junction field‐effect transistors (JFETs) based on n‐type zinc oxynitride (ZnON) as a channel material and room‐temperature deposited p‐type ZnCo2O4 (ZCO) as a heterojunction gate. Devices with different channel thicknesses are thereby compared. Best devices with 48 nm channel layer thickness achieve drain current on/off–ratios of 105 and low subthreshold swing of 134 mV dec−1 within a gate voltage sweep of less than 2 V. The channel mobility extraction is reliable for 90 nm‐thick channels yielding saturation mobility values over 50 cm2 V−1 s−1. For JFETs with 48 nm‐thick channels an overestimation of the saturation mobility due to deviations from the ideal transistor characteristics is determined.