Abstract
Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al2O3) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al2O3 heterojunction unit. The measurements of transmittance electronic microscopy (TEM) and X-ray reflectivity (XRR) revealed the smooth interfaces between ~2.2-nm-thick Al2O3 layers and ~2.7-nm-thick AZO layers. The devices were entirely composited by aluminiferous materials, that is, their gate and source/drain electrodes were respectively fabricated by aluminum neodymium alloy (Al:Nd) and pure Al, with Al2O3/AZO multilayered channel and AlOx:Nd gate dielectric layer. As a result, the all-aluminum TFT with two Al2O3/AZO heterojunction units exhibited a mobility of 2.47 cm2/V·s and an Ion/Ioff ratio of 106. All processes were carried out at room temperature, which created new possibilities for green displays industry by allowing for the devices fabricated on plastic-like substrates or papers, mainly using no toxic/rare materials.
Highlights
Metal oxide semiconductors (MOSs) are supposed to be promising materials for thin film transistor (TFT) in displays, which have many favorable properties including high mobility, good uniformity, and electrical stability [1,2]
Along the in-plane direction, the high electron movement was expected to be induced by the aluminum doping zinc oxide (AZO)/Al2O3 multilayers, due to the two dimension electron transfer formed in the interfaces between AZO and Al2O3
It is worth mentioning that all processes were carried out at room temperature, which allows for the devices fabricated on plastic-like substrates or papers
Summary
Metal oxide semiconductors (MOSs) are supposed to be promising materials for thin film transistor (TFT) in displays, which have many favorable properties including high mobility, good uniformity, and electrical stability [1,2]. MOS-based devices can overcome many obstacles and limitations of the conventional silicon devices, such as a complex process and high cost. The attention of researchers has been focused on the novel design devices of nanoscale-stacked materials, which are formed by sequentially depositing different materials in the nanometer scale [5,6,7,8]. Most of the nanoscale stacked oxide thin film transistors reported a required annealing process to improve the electrical properties.
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