Abstract
We comparatively investigated the room temperature adsorption kinetics of Cs and K on the GaAs(110) surface either cleaved or sputter processed. Ar+ induced surface modifications have been characterized in terms of stoichiometry, crystalline order and chemical bonding. After metal deposition, interfaces were analyzed by Auger electron spectroscopy. Differences in the amount of adsorbate atoms, in the interfacial reactivity and segregation behaviour have been found between simply cleaved or cleaved + sputterprocessed substrates. On the contrary, the sticking coefficient in the early adsorption stage, the active adsorption sites and the reaction products are very similar.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
