Abstract
In this paper, performance of mid‐infrared light emitting diodes (LEDs) with an InSb buffer layer and AlInSb active/barrier layers, emitting at room temperature is reported. This film structure makes an ideal base material in view of carrier confinement and crystalline quality. In order to achieve a high efficiency for light extraction, backside emission architecture is adopted together with a rough emitting surface and TiO2 anti‐reflection coating. The resulting AlInSb LED shows 75% higher power conversion efficiency than the reference, which has the highest efficiency in the market to date.
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