AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Abstract

AbstractWe report the development of AlInP‐passivated solar cells grown by dynamic hydride vapor‐phase epitaxy (D‐HVPE) with AM1.5G efficiencies of 26.0% for single‐junction (1J) GaAs cells and 28.0% for GaInP/GaAs (2J) tandems. We compare the device performance of solar cells passivated with AlInP versus control cells passivated with GaInP, which has already enabled near‐unity carrier collection in GaAs solar cells. 1J devices passivated with either AlInP or GaInP have an identical open‐circuit voltage (VOC) of 1.06 V and long‐wavelength current collection near 95%, indicating that both window materials provide a similar degree of passivation. Adding AlInP passivation to each solar cell structure improves the current collection by 1.3 and 1 mA/cm2 for the 1J and 2J, respectively. The AlInP also results in a top cell VOC boost of ~40 mV relative to a tandem device passivated only by a thin, highly doped GaInP emitter. Secondary‐ion mass spectrometry measurements indicate that although O and Si both incorporate in the AlInP window, they do not appear in the subsequently grown absorber layers and do not impact its ability to passivate the front surface. We expect that these achievements, along with continued optimization, will enable parity of hydride vapor‐phase epitaxy (HVPE)‐grown device efficiencies with state‐of‐the‐art devices grown by other epitaxial methods in the near future.