AlInAsSb and AlGaInAsSb solid solutions for barrier layers of 3–5 μm spectral range radiation sources obtained by the method of vapor-phase epitaxy from organometallic compounds

Abstract

Epitaxial growth of Al u Ga1 − u − x In x As y Sb1 − y and Al u Ca1 − u As y Sb1 − y solid solutions has been investigated. Epitaxial layers with the compositions 0.02 < u < 0.11, 0.88 < x < 0.93, and 0.88 < y < 0.98 have been grown on InAs substrates by metal-organic vapor-phase epitaxy at low pressure (76 Torr) and at the ratio of the sum of partial pressures of compounds of fifth-group elements to that for compounds of third-group elements V/III = 3.6–6. At a lattice mismatch of 1 × 10−3, the half-widths of the rocking curves for the best samples were 15 arcsec for substrates and 66 arcsec for layers.