Abstract
In thin Ge crystals implanted with Te+ (50 keV, 1015 ions cm−2) along a 〈110〉 axis an alignment of the radiation damages in direction 〈110〉 is observed by TEM. The orientation of this alignment is changed or completely disappears in places where the crystal structure is disturbed (e.g. by second phase inclusions). It is supposed that the observed defects have the character of precipitates in the crystal matrix. The explanation of such alignment of the defects is considered to be connected with the peculiarities of the real crystal structure “decorated” by the radiation defects. [Russian Text Ignored].
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