Abstract
Abstract The production and removal of radiation defects in Ge (110) single crystals are studied by measuring the variation in the kinetic secondary electron emission yield during bombardment by 40 keV Ge ions. A strong dose rate effect has been found in the temperature dependence of the defect production. An activation energy of 1.44 eV has been calculated for the defect which plays an important role in the removal of damage in Ge.
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