Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy protons to doses up to . There was no significant degradation in dc electrical parameters such as drain–source current and extrinsic transconductance of the HEMTs up to a fluency of . At the highest dose of there was a decrease of in and a decrease in . The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.
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