Abstract
We report on the investigations of AlGaN/GaN field effect transistors with two lateral Schottky barrier gates on the sides of the two-dimensional electron gas. This kind of ‘EdgeFET’ allowed us to efficiently control the current flow in the 2DEG conduction channel. Moreover, due to depletion, regions at a certain range of reverse biasing form a nanowire, which is beneficial for the adjustable resonant THz detection. Our studies of DC characteristics and photoresponse in the sub-terahertz frequency confirm the validity of the approach.
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