Abstract
We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors with two lateral Schottky barrier gates exactly placed on the edges of the fin-shaped transistor channel. This kind FinFET modification (EdgeFET) allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. We present experimental data of sub THz detection by EdgeFETs. We describe also how it is beneficial for observation of resonant plasma wave THz detection and emission.
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