Abstract
AbstractTo improve the performances of AlGaN solar‐blind ultraviolet (UV) avalanche photodetectors (APDs), we propose a separate absorption and multiplication (SAM) AlGaN APD with a gradually doped charge layer. The calculation results indicate that the designed APD can significantly increase the maximum gain by almost 40%, and reduce the breakdown voltage by about 9% compared with the conventional AlGaN APD. The parameters of multiplication layer and p‐type layer are optimized, and the physical mechanism is described in detail, which provides theoretical guidance for high‐performance device structure design and experimental preparation.
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