Abstract
A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2Ga0.8N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0μm thick high-quality crack-free nearly GaN-free Al0.2Ga0.8N epilayer was obtained.
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