AlGaN-Channel Gate Injection Transistor on Silicon Substrate With Adjustable 4–7-V Threshold Voltage and 1.3-kV Breakdown Voltage

Abstract

We report on demonstrating the first Al0.05Ga0.95N-channel enhancement-mode (E-mode) p-GaN gate injection transistors (GITs) with an adjustable threshold voltage ( ${V}_{\textsf {T}}$ ) of 4–7-V by controlling the number of source-connected p-GaN bridges. To the best of our knowledge, it is the highest ${V}_{T}$ reported in p-GaN GITs. Comparing with GaN channel, the Al0.05Ga0.95N channel is used to minimize the polarization difference between channel layer and Al0.15Ga0.85N barrier layer and also increase the maximum affordable electric field of the channel so as to increase the ${V}_{T}$ and breakdown voltage. Combing with $4.3~\mu \text{m}$ -thick buffer layer, E-mode GITs demonstrate an OFF-state breakdown voltage of 662, 770, 1034, and 1315 V at a gate-to-drain spacing of 5, 7, 11, and $19~\mu \text{m}$ , respectively, showing the great promise of the AlGaN channel E-Mode GITs for future power electronics applications.