Abstract
GaN-based natural superjunction diodes and Gate Injection Transistors (GITs) with p-type gate on AlGaN/GaN hetero structure are promising power devices with lower on-state resistance and higher breakdown voltage for power switching applications. In this paper, the current status of the devices for integrated circuits and their application to power switching systems are reviewed, after explaining the basic technologies for decreasing on-resistance, increasing breakdown voltage, and suppressing current collapse. In addition, a solution to increase switching frequency of GITs for smaller system size is described. The effects of integrated circuit of DC/DC converter consisted of gate driver, high-side GIT and low-side GIT with short gate length are also examined.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
