Abstract
AlGaAs/GaAs TJS (Transverse Junction Stripe) laser diodes are fabricated on p-Si substrates by MOCVD. The preferential Zn diffusion is performed in DH structure on Si at 650°C using sputtered SiO 2 as diffusion mask. The diodes have lased at room temperature (27°C) pulsed conditions with the minimum threshold current of 379mA.
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