Abstract
Abstract p-MODFET structures have been successfully prepared by atmospheric MOVPE using methyl metalorganic reagents. Intrinsic carbon associated with the decomposition of trimethyl aluminum was used as a dopant. The concentration of this impurity increases with growth temperature and aluminium mole fraction (MF), but decreases with substrate misorientation angle. The largest 2DHG density was 5.8×10 12 cm -2 , using an AlAs configuration. The highest gm from a 2 μm gate device based on carbon doped Al 0.84 Ga 0.16 As/GaAs was 50 mS/mm (77 K). A 170AIn 0.08 Ga 0.92 As pseudomorphic based MODFET using carbon doped Al 0.74 Ga 0.26 As exhibited a room temperature extrinsic transconductance (gm) of 28 mS/mm, almost twice the value of the best AlGaAs/GaAs device.
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