Abstract
Lasing performance of GaInP / AIInP lasers grown on misoriented GaAs substrates by gas source molecular beam epitaxy (GS-MBE) strongly depended on the substrate misorientation angle (SMA). In this paper, dependences of photoluminescence (PL) properties and carrier concentration of (Al x Ga 1- x ) 0.5In 0.5P crystals grown by GS-MBE, on SMA were systematically investigated. It turned out, through the PL measurements, that the Al-related non-radiative recombination in (Al x Ga 1- x ) 0.5In 0.5P layers was reduced with increasing of SMA. On the other hand, the electrical activity of Be in p-type Al 0.5In 0.5P layers was enhanced together with increased SMA. These substrate misorientation effects in GS-MBE grown AlGaInP are discussed in connection with the improved lasing characteristics.
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