Abstract
Experiments on the atomic layer deposition (ALD) of vanadium oxide from vanadyl triisopropoxide are presented. Water and oxygen plasma based processes are compared to the thermal process which uses water as a reagent. The plasma enhanced processes enable a fast ALD of films in a wide temperature range (50-200{degree sign}C). Pure, crystalline V2O5 can be grown with oxygen plasma ALD at 150{degree sign}C. Water based ALD resulted in carbon-contaminated, amorphous vanadia. The plasma steps were monitored with optical emission spectroscopy.
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