Albedo parameters of selenium and boron compounds doped V2O5 thin films

Abstract

VOx thin films are used in automobiles, screen applications and architectural areas. It can be control the transmitted or reflected light intensity in electrochromic glasses produced from VOx thin films. In this work, undoped, Se, H3BO3, NH3–BH3 and BH3C2H5 doped VOx thin films were grown on glass substrates by using spray pyrolysis method. XRD and SEM analyzes were done to determine crystal structures and grain sizes of thin films. XRF experiments were carried out by using an HPGe detector with a resolution of 182 eV at 5.9 keV. Albedo parameters, or reflection coefficients, known as the reflecting power of a surface of material were measured at the scattering angle of 168° by using 59.54 keV gamma rays emitted from a radioactive source of Am241. XRD patterns show that the V2O5 (vanadium pentoxide) thin film phase and crystal structure are significantly changeable and controllable according to doping metal. SEM morphology shows that V2O5 film with the boron dopant has rod-shaped nanostructured. Also, it is observed that albedo parameters of boron compounds doped V2O5 thin films significantly changes.