Abstract
Crystallographic properties of AlAs barriers in GaAsBi-based multi-quantum well structures grown on GaAs substrates by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) were studied. The quantum wells were grown at temperatures ranging from 160 to 350 °C. The width of GaAsBi quantum wells varied from 4 to 20 nm. The optimization of technological parameters for the growth of high crystalline quality AlAs barriers at low temperatures was performed. To explore the impact of high temperature treatment on crystal quality, surface roughness and chemical composition stability, ex situ rapid thermal annealing was performed at 650–750 °C for 180 s in nitrogen ambiance. The structural quality of AlAs barriers, the morphology and sharpness of the interfaces between GaAsBi quantum wells and AlAs barriers were studied by high resolution X-ray diffraction, atomic force microscopy and high resolution transmission electron microscopy, respectively. In this study it was demonstrated that MEE allows one to achieve higher crystal quality of AlAs barriers at much lower temperatures in comparison to MBE. The blocking of Bi out-diffusion from the GaAsBi quantum wells toward the surface was shown for both MBE and MEE grown AlAs barriers.
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