Abstract
Top-contact thin-film transistors( TFTs) were fabricated using Si Nxas the gate insulator and In Ga Zn O as the channel layer. The insulator was modified by Al2O3 layer and its effect on the performance of IGZO-TFTs was investagated. The results show that TFTs with 4-nm-thick Al2O3 film exhibits the best electrical performance. The best performance can be attributed to the suppression of maximum density of surface states at the channel-insulator interface which is reduced by 17. 2%contrasting to the TFTs without Al2O3 buffer layers. The field effect mobility increases from 1. 19 to7. 11 cm2/( V·s),and the threshold voltage decreases from 39. 70 to 25. 37 V. Under bias stress for 1 h,the threshold voltage shift decreases from 2. 19 to 1. 41 V / dec.
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