Abstract
Comparing with Ge2Sb2Te5, Al1.3Sb3Te is proved to be a promising candidate for phase-change memory use because of its higher crystallization temperature (∼210 °C), larger crystallization activation energy (3.32 eV), and better data retention ability (124 °C for 10 yr). Furthermore, Al1.3Sb3Te shows fast phase change speed and crystallizes into a uniformly embedded crystal structure. As short as 10 ns width, voltage pulse can realize reversible operations for Al1.3Sb3Te based phase-change memory cell. Moreover, phase-change memory cell based on Al1.3Sb3Te material also has good endurance (∼2.5 × 104 cycles) and an enough resistance ratio of ∼102.
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