Abstract
Compared with Sb2Se, Si–Sb–Se material is proved to be a promising candidate for phase change memory (PCM) use because of its higher crystallization temperature (~230°C), larger crystallization activation energy (3.25eV), and better data retention ability (168°C for 10years). Furthermore, the fast crystallization time 3.30ns is obtained for Si0.20(Sb2Se)0.80 material by the picosecond laser technique. The set switching is realized with low threshold current 6.9μA and voltage 1.80V, respectively. The reverse resistance transition can be achieved by an electric pulse as short as 8ns for Si0.20(Sb2Se)0.80-based PCM cell.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
