Abstract
We report on the demonstration of high current density in Al0.65Ga0.35N/Al0.4Ga0.6N heterojunction field effect transistors with micro-channels enabled by enhanced contact injection. Devices with a gate length of 100 nm exhibited a maximum current density of 910 mA/mm and a maximum transconductance of 140 mS/mm. A current gain cut off frequency of 20 GHz and maximum oscillation frequency of 36 GHz were obtained. Large-signal load-pull characterization of the transistors showed output power density of 2.7 W/mm at 10 GHz. The current density and output power density represent the state-of-art performance for high Al-composition AlGaN channel transistors.
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