Al0.30Ga0.70N/GaN/Al0.07Ga0.93N Double Heterostructure High Electron Mobility Transistors with a Record Saturation Drain Current of 1050mA/mm**Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02308-002, and the National Natural Science Foundation of China under Grant Nos 11435010 and 61474086.

Abstract

We report Al0.30Ga0.70N/GaN/Al0.07Ga0.93N double heterostructure high electron mobility transistors with a record saturation drain current of 1050 mA/mm. By optimizing the graded buffer layer and the GaN channel thickness, both the crystal quality and the device performance are improved significantly, including electron mobility promoted from 1535 to 1602 cm2/V·s, sheet carrier density improved from 0.87×1013 to 1.15×1013 cm−2, edge dislocation density reduced from 2.4×109 to 1.3×109 cm−2, saturation drain current promoted from 757 to record 1050 mA/mm, mesa leakage reduced by two orders in magnitude, and breakdown voltage promoted from 72 to 108 V.