Abstract
A charge control based analytical model is followed to study the impact of donor-layer doping and gate-length on microwave frequency performance of AlGaN/GaN/AlGaN double heterostructure high electron mobility transistor (DH-HEMT). DH-HEMT is observed to be more sensitive to gate-length and doping variation as compared to single heterostructure high electron mobility transistor (SH-HEMT). The effect of gate-length and doping on various performance parameters, i.e., transconductance, drain conductance, cut-off frequency and maximum oscillation frequency has been analysed. The results so obtained are compared with simulation results and are found to be in good agreement.
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