Abstract
Most current MEMS packaging applications either use glass frit and anodic bonding or metals such as gold that are not compatible with CMOS front end processing. There is a growing need for a wafer bonding process that is suitable for both MEMS and CMOS fabs. Al-Ge based eutectic bonding not only overcomes most of the drawbacks associated with glass-frit and anodic bonding; it also provides a practical solution for wafer level packaging for CMOS/MEMS applications as both Al and Ge are CMOS and MEMS Fab-friendly materials. In addition to providing a hermetic seal, AlGe bonding provides an electrically conductive path between two substrates. This paper describes a practical AlGe based bonding and post bond characterization process. In addition, a novel post bond hermeticity/ leakage testing process is also described in this paper.
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