Abstract
We show that one-pulse laser-ablation of Al2O3/SiNx layer stacks from silicon wafers can produce substantial p+-type Al-doped regions in the substrate. We present doping profile measurements which show that the Al-doping profiles of the laser-treated region strongly depend on the laser ablation parameters and thickness of the Al2O3 layer. We find for non-passivated laser Al-doping profiles with sheet resistance Rsheet = 180 Ω □−1 a saturation current densities J0,surf = 4 pA cm−2, which is approximately the same recombination activity as that of a boron furnace diffused layer of the same sheet resistance.
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