Abstract
The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on corning 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, 600℃ for 10 min and annealing resulted in lower biaxial compressive stress of about 1 ㎬ and increased average crystallite size in all films. The as-grown film shows the resistivity of 1 × 10?²Ωㆍ㎝ and transmittance under 80%, whereas the electrical and optical properties of film annealed at 400℃ are enhanced up to 5×10?⁴Ωㆍ㎝ and 85%, respectively.
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