Abstract
AbstractAl / AI-N / AIN compositional gradient thin film was deposited on a Si(100) substrate at room temperature by ion-beam assisted deposition method, with a diminishing ion beam current from 1.4 to 0 mA at increments of 0.3 mA in order to gradually decrease the nitrogen to aluminum ratio at the substrate. The gradual Al and AIN variation in composition was shown by the change of the Al / N atomic ratio analysed by the energy dispersive X-ray spectroscopy(EDX) and the X-ray photoelectron spectroscopy (XPS) in the cross section of the film. The formation of crystalline Al metal and AIN ceramic layer on the Si substrate was revealed by X-ray diffraction(XRD). The cross sectional image taken by high resolution transmission electron microscope (HRTEM) showed a nano-sized crystalline AI-N ceramic material and the flat interface between the Si substrate and the AIN film.
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