Abstract
In order to investigate the potassium (K) gettering, Al-1%Si/<TEX>$SiO_2$</TEX>/PSG multilevel thin films were fabricated. Al-1%Si thin films and <TEX>$SiO_2$</TEX>/PSG passivations were deposited by using DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition), respectively. Heat treatment was carried out at <TEX>$300^{\circ}C$</TEX> for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of K, Al, Si, P, and other elements throughout the <TEX>$SiO_2$</TEX>/PSG passivated Al-1%Si thin film interconnections. Potassium peaks were observed throughout the <TEX>$SiO_2$</TEX>/PSG passivation layers, and especially the interface gettering at the <TEX>$SiO_2$</TEX>/PSG and at the Al-1%Si/<TEX>$SiO_2$</TEX> interfaces was observed. Potassium gettering in Al-1%Si/<TEX>$SiO_2$</TEX>/PSG multilevel thin films is considered to be caused by a segregation type of gettering.
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