Abstract
A 0.13 μm SiGe BiCMOS band-switchable low noise amplifier (LNA) is developed which can be operated at 28 or 60 GHz. The LNA employs an LC tank at the input to perform dualband impedance matching, while the output is switched from one band to the other using a tunable stub. The stub is made tunable by using an HBT switch, which reduces the stub's length when turned on shifting the LNA between 28 and 60 GHz modes. The switch has 1.2 dB ONand 0.7 dB OFF-state losses. The measured results are /15 dB small signal gain, 2.8/3.4 dB noise figure, and -12/-7 dBm compression point (P1dB) at 28/60 GHz, respectively. The band-switchable compact LNA has a chip size of 0.48 × 0.48 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and consumes a dc power of 8.2/21 mW at 2.5 V supply voltage. Among the research studies, this is the first demonstration of a 28/60 GHz dual-band LNA with a performance comparable to dedicated LNAs in each band.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.