Air stable organic complementary inverter with high and balance noise margin based on polymer/metal oxide hybrid gate dielectrics

Abstract

This study demonstrates an ambient air operated organic complementary inverter composed of a pentacene p-channel and a N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide n-channel organic thin-film transistor (TFT) fabricating at room temperature. The gate dielectric is an ultrathin polystyrene-co-methyl methacrylate (PS-r-PMMA)-modified hafnium oxide hybrid layer. Grafting the PS-r-PMMA passivates the surface defects. The transistors exhibit balanced performance, including threshold voltage, on/off current ratio, and field effect mobility. Similar channel dimensions for both types of TFT can be designed for the inverter construction. The inverter operates well below 6V. The switching voltage is approximately Vdd/2 with a high noise margin (87% of theoretical value), which is suitable for flexible logic applications.