Abstract
High speed rectifiers that can be fabricated at low cost whilst still maintaining a high performance are of interest for wireless communication applications. In this letter amorphous indium gallium zinc oxide (a-IGZO) has been used with adhesion lithography (a technique to create asymmetric planar electrodes separated by a nanogap) to fabricate high performance Schottky diode rectifiers. The diode area and junction capacitance can be significantly reduced using this technique, improving device cut-off frequencies. Devices of different widths have been fabricated showing rectification ratios between 103-104. Capacitances measured for devices of various sizes were all on the order of 0.1 pF. By applying ac signals to the diode and measuring the output voltage across a load resistor a cut-off frequency was found. a-IGZO diodes with an extrinsic cut-off frequency of 6.4 GHz at a 15 dBM input power have been realized. The devices also show good air stability with little change in current-voltage characteristics after 12 months.
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