Abstract
Aluminium nitride films were synthesized by reaction of laser-evaporated Al in NH 3 atmosphere. Optical multichannel emission spectroscopy (OMA) and intensified charge coupled device (ICCD) imaging have been applied to in situ identification of deposition precursors in the plasma plume moving from the target to the substrate. Mass spectrometry has also been used to detect ionic species ejected from an Al target in a mixture with NH 3. Thin films prepared by this method were characterized by conventional techniques such as Auger, energy dispersive analysis of X-ray (EDAX), scanning electron microscopy (SEM), and X-ray diffraction. Highly oriented films of AIN (100) on Si (100) were identified.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
