Abstract
The effect of the quaternary solid solution (QSS) immiscibility region (IR) on the In x Ga1−xAs y Sb1−y /GaSb liquid-phase epitaxy (LPE) was investigated. To obtain GaSb-related OSS (x<0.15) the traditional procedure of LPE from supercooled melts was used. In this case, the required melt supercooling (ΔT 0≈3÷7 K, depending on the QSS composition and temperature), is caused by the necessity to suppress tendency for substrate dissolution in a satured liquid phase. The IR effect on the LPE process reveals atx≈0.17÷0.22.
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