Abstract
Crystallinity of InGaPAs layers grown on GaAs substrates by liquid phase epitaxy has been examined by observing equal thickness fringes in transmission electron microscopy. Even InGaPAs layers within the theoretically immiscible composition region are found to be of one phase without compositional fluctuation. Phase separation, which can theoretically occur, is not found. However, crystallinity is generally inferior, and this inferiority increases as the epitaxial layer grows. The substrate-induced stabilization effect seems to produce high quality crystals in the immiscible region only in the initial stage of epitaxial growth. It is also found that immiscibility affects InGaPAs layers grown on GaAs substrates to a greater extent than those grown on InP substrates.
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