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Abstract
AbstractThis article deals with the application of the AlGaAs‐GaAs DMT principle to the millimeter wave range. It is based on two technological realizations and related characterizations. An Idss of 700 mA/mm and a 10‐12‐V breakdown voltage are demonstrated. Power measurements indicate an output‐power capability of about 0.5 W/mm at 30 GHz.
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