Abstract
The long-term electrical reliability/stability measurements, including negative bias stress and aging over 10 months of nitrogen-doped (N-doped) and un-doped amorphous InGaZnO thin-film transistors (a-IGZO TFTs) were investigated. Aged un-doped a-IGZO TFT exhibits larger threshold voltage shift (ΔVth) of 2.43V and turn on voltage shift (ΔVon) of 5.37V due to combination of the surface desorption of oxygen atoms and moisture adsorption. The noticeable decrease in ΔVth (0.93V) and ΔVon (0.81V) of in-situ nitrogen doped a-IGZO TFT indicates the surface interaction is prevented due to effective passivation of inactive oxygen׳s in the channel. After 10 months aging time, the ΔVth (~2.66V) and ΔVon (~4.62V) of un-doped devices were observed under the negative gate bias stress, which is comparable to ~0.83V and ~0.85V in nitrogen doped a-IGZO devices, respectively. The perspectives reported here shall be useful in fabricating passivation-free oxide based semiconductor TFTs for device operation in stable ambient conditions.
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