Abstract
Instability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) remains an obstacle for commercialization. Here, we systematically discuss the effect of nitrogen incorporation on a-IGZO TFT stability and developed Ar/O2/N2 atmosphere to improve the stability under stressing in different conditions. Based on X-ray photoelectron spectrometer results, it is revealed that the positive gate bias stress (PGBS) stability is significantly improved due to microscopically passivated metal–oxygen bonds. Yet, the negative gate bias and light stress (NBLS) stability is seriously deteriorated with heavily nitrogen incorporation probably due to the bandgap narrowing effect. By optimizing a mixed O2/N2 atmosphere, the subgap states are finely tuned to afford optimal performance and stability. The developed IGZO TFTs exhibit mobility (12.67 cm2/Vs), small shift of threshold voltage under PGBS (reduced by 64% as compared with the pristine a-IGZO TFTs), and good negative gate bias stability and with NBLS stability as well.
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