Abstract
Preferential [0001] oriented ferroelectric YMnO3 thin films were prepared on Si substrates using inorganic precursors by sol-gel method. X-ray diffraction (XRD) measurement shows that the peak shifts were reduced through aging. Wider C-V window was obtained on the aged sample at room temperature. This is attributed to that the film stress relieves through aging and so the ferroelectricity can be fully displayed.
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