Abstract
We have studied the stability of resistive switching behavior observed in RF sputtered ZnO thin film deposited on Pt/TiO2/SiO2/Si substrate with two different top electrodes, such as Ag and Al. Interestingly, there was no resistive switching behavior observed for freshly prepared devices. However, we have observed the switching behavior after few days. The switching voltage is found to be about 0.5 V. The resistive switching is found to appear due to the formation and rupture of conducting filaments made of the oxygen vacancies. Notably, the aging based resistive switching disappears after few days and shows a linear I–V curve, due to the increase of conducting filaments and the formation of conducting paths across the ZnO film.
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