Ageing effect on dielectric properties of SnO2, Sb2O3, and their mixed thin films

Abstract

AbstractThin films of various thicknesses in the form of MIM structures have been prepared from the powders of high purity of SnO2, Sb2O3, and their mixed powders separately by the thermal evaporation technique in a vacuum of 10−5 Torr. The dielectric properties of these oxide thin films have been studied with ageing time and also with frequency at room temperature. The results obtained have shown that the capacitance and loss tangent of the structures initially fall off rapidly and thereafter they attain a constant value even after ageing the capacitors for about 20 days. The rapid fall of capacitance and loss tangent may be due to the rapid decrease in the density of defects due to ageing time. The results thus obtained on SnO2, Sb2O3, and their mixed thin film capacitors are presented and discussed.