Ag3SbS3 Liquid-Junction Semiconductor-Sensitized Solar Cells

Abstract

We present a new ternary semiconductor absorber material – Ag3SbS3 – for solar cells. Ag3SbS3 nanoparticles were grown on mesoporous TiO2 electrodes using a two-stage successive ionic layer adsorption reaction process. Post annealing transformed the double-layered structure into the Ag3SbS3 phase. The energy gap of the synthesized Ag3SbS3 nanoparticles is estimated to be ∼1.5–1.7 eV. Liquid-junction semiconductor-sensitized solar cells were fabricated from the synthesized nanoparticles using a polysulfide electrolyte. The best cell yielded a short-circuit current density Jsc of 11.47 mA/cm2, an open-circuit voltage Voc of 0.33 V, a fill factor FF of 38.92%, and a power conversion efficiency η of 1.47% under 1 sun. The external quantum efficiency (EQE) spectrum covered the spectral range of 300–850 nm with a maximal EQE = 80% at λ = 500 nm. At the reduced light intensity of 13% sun, the η increased to 2.18% with Jsc = 2.46 mA/cm2 (which could be normalized to 18.9 mA/cm2). The respectable photovoltaic performance indicates that Ag3SbS3 could be a potential solar absorber material.