Abstract
We present a new ternary semiconductor absorber material – Pb1−xSnxS – for solar cells. Pb1−xSnxS nanocrystals (NCs) were synthesized using the successive ionic layer adsorption reaction (SILAR) process. Energy-dispersive X-ray spectroscopy revealed the Sn ratio for a sample prepared with five SILAR cycles to be x=0.55 (i.e. non-stoichiometric formula Pb0.45Sn0.55S). The optical spectra revealed that the energy gap Eg of the Pb1−xSnxS NCs decreased with an increasing number of SILAR cycles n, with Eg=1.67eV for the sample with n=5. Liquid-junction Pb1−xSnxS quantum dot-sensitized solar cells were fabricated using the polysulfide electrolyte. The best cell yielded a short-circuit current density Jsc of 10.1mA/cm2, an open circuit voltage of 0.43V, a fill factor FF of 50% and an efficiency of 2.17% under 1 sun. The external quantum efficiency spectrum (EQE) covered a spectral range of 300–800nm with a maximum EQE of ∼67% at λ=650nm. At the reduced light of 0.1 sun, the efficiency increased to 3.31% (with a normalized Jsc=17.7mA/cm2) – a respectable efficiency for a new sensitizer. This work demonstrates that Pb1−xSnxS shows potential as a solar cell absorber.
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